kw.\*:("Dispositif 1 électron")
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Single-electron random-number generator (RNG) for highly secure ubiquitous computing applicationsUCHIDA, Ken; TANAMOTO, Tetsufumi; OHBA, Ryuji et al.IEDm : international electron devices meeting. 2002, pp 177-180, isbn 0-7803-7462-2, 4 p.Conference Paper
A floating gate single electron memory device with Al2O3 tunnel barriersYADAVALLI, Kameshwar K; ANDERSON, Nicolas R; ORLOVA, Tatiana A et al.DRC : Device research conference. 2004, pp 97-98, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
Excess Dissipation in a Single-Electron Box: The Sisyphus ResistancePERSSON, F; WILSON, C. M; SANDBERG, M et al.Nano letters (Print). 2010, Vol 10, Num 3, pp 953-957, issn 1530-6984, 5 p.Article
Surface-acoustic-wave single-electron interferometryRODRIQUEZ, Roberta; OI, Daniel K. L; KATAOKA, Masaya et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085329.1-085329.4, issn 1098-0121Article
Fabrication of complimentary single-electron inverter in single-wall carbon nanotubesTSUYA, D; SUZUKI, M; AOYAGI, Y et al.DRC : Device research conference. 2004, pp 57-58, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
La conquête de l'espace infinitésimal = The conquest of infinitesimal spaceROUKES, Michael.Pour la science. 2001, Num 290, pp 46-51, issn 0153-4092Article
Charge transport and single-electron effects in nanoscale systemsTHIJSSEN, J. M; VAN DER ZANT, H. S. J.Physica status solidi. B. Basic research. 2008, Vol 245, Num 8, pp 1455-1470, issn 0370-1972, 16 p.Article
Influence of the electromagnetic environment on the accuracy of the single electron pumpBUBANJA, Vladimir.Journal of the Physical Society of Japan. 2002, Vol 71, Num 6, pp 1501-1505, issn 0031-9015, 5 p.Article
Single-electron transistor backaction on the single-electron boxTUREK, B. A; LEHNERT, K. W; CLERK, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 19, pp 193305.1-193305.4, issn 1098-0121Article
Composite pulses for quantum computation with trapped electronsSTORTINI, S; MARZOLI, I.The European physical journal. D, Atomic, molecular and optical physics (Print). 2005, Vol 32, Num 2, pp 209-213, issn 1434-6060, 5 p.Article
Switching in a reversible spin logic gateBANDYOPADHYAY, S; ROYCHOWDHURY, V. P.Superlattices and microstructures. 1997, Vol 22, Num 3, pp 411-416, issn 0749-6036Article
Single-electron spectroscopyASHOORI, R. C.RLE Progress report. 1995, Num 138, pp 95-102, issn 0163-9218Article
The thermoelectric figure of merit for the single electron transistorRAMOS, E; SILVA-VALENCIA, J; FRANCO, R et al.International journal of thermal sciences. 2014, Num 86, pp 387-393, issn 1290-0729, 7 p.Article
Nanoengineering: fabrication, properties, optics, and devices VI (4-5 August 2009, San Diego, California, United States)Dobisz, Elizabeth Ann; Eldada, Louay A.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7402, issn 0277-786X, isbn 978-0-8194-7692-0 0-8194-7692-7, 1Vol, various pagings, isbn 978-0-8194-7692-0 0-8194-7692-7Conference Proceedings
Room temperature electrometry with SUB-10 electron charge resolutionLEE, Joshua; YONG ZHU; SESHIA, Ashwin et al.Journal of micromechanics and microengineering (Print). 2008, Vol 18, Num 2, issn 0960-1317, 025033.1-025033.8Article
Design and simulation of a nanoelectronic single-electron Control-Not gateZARDALIDIS, George T; KARAFYLLIDIS, Ioannis.Microelectronics journal. 2006, Vol 37, Num 2, pp 94-97, issn 0959-8324, 4 p.Article
Single-electron quantum dots in silicon MOS structures : Semiconductor nanostructures: fundamentals and applicationsKHOURY, M; GUNTHER, A; MILICIC, S et al.Applied physics. A, Materials science & processing (Print). 2000, Vol 71, Num 4, pp 415-421, issn 0947-8396Article
Room-temperature single electron devices by scanning probe processMATSUMOTO, Kazuhiko.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 83-91Conference Paper
Spin tunneling and Coulomb blockade in Co-Al2O3-permalloy tunnel junctionsBRÜCKL, H; VINZELBERG, H; KRETZ, J et al.Materials science forum. 1998, issn 0255-5476, isbn 0-87849-815-X, p. 503Conference Paper
Single-electron electronicsKASTNER, M. A.RLE Progress report. 1997, Num 139, pp 51-52, issn 0163-9218Article
Ultimate accuracy of single-electron dc current standardsAVERIN, D. V; ODINTSOV, A. A; VYSHENSKII, S. V et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1297-1308, issn 0021-8979Article
Single-Electron Capacitance Spectroscopy of Individual Dopants in SiliconGASSELLER, M; DENINNO, M; LOO, R et al.Nano letters (Print). 2011, Vol 11, Num 12, pp 5208-5212, issn 1530-6984, 5 p.Article
Effect of topology on coherent transport through nanotube junctionsMARCHI, A; BERTONI, A; REGGIANI, S et al.IEEE conference on nanotechnology. 2004, pp 104-106, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper
Design and simulation of a single-electron full-adderZARDALIDIS, G. T; KARAFYLLIDIS, I.IEE proceedings. Circuits, devices and systems. 2003, Vol 150, Num 3, pp 173-177, issn 1350-2409, 5 p.Article
Performance analysis of single-electron winner-take-all network circuitsGUIMARAES, Janaina; CAMARGO DA COSTA, José.Proceedings - Electrochemical Society. 2003, pp 120-129, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper